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SEMICONDUCTOR
TECHNICAL DATA
General Description
It s mainly suitable for use as a load switch.
FEATURES VDSS=-20V, ID=-3.7A Drain to Source on-state Resistance RDS(ON)=76m (Max.) @ VGS=-4.5V RDS(ON)=112m (Max.) @ VGS=-2.5V
KMA3D7P20SA
P-Ch Trench MOSFET
E L BL
DIM MILLIMETERS A 2.93+_ 0.20
B 1.30+0.20/-0.15
A G H
D
23
C 1.30 MAX D 0.40+0.15/-0.05
E 2.40+0.30/-0.20 1 G 1.90
H 0.95
J 0.13+0.10/-0.05
K 0.00 ~ 0.10 Q
PP
L 0.55
M 0.20 MIN
N 1.00+0.20/-0.10
C N K J
P7
Q Max 0.1.
M
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL P-Ch UNIT
Drain to Source Voltage
Gate to Source Voltage
Drain Current
DC@Ta=25 Pulsed
(Note1) (Note1)
VDSS VGSS
ID IDP
-20 V
12 V
-3.
KMA3D7P20SA Datasheet
