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KMB060N40BA - N-Channel Trench MOSFET

Datasheet Summary

Description

This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

It is mainly suitable for Back-light Inverter and power Supply.

Features

  • VDSS=40V, ID=60A. Low Drain to Source ON Resistance. : RDS(ON)=8.5m (Max. ) @ VGS=10V : RDS(ON)=11m (Max. ) @ VGS=4.5V Super High Dense Cell Design. High Power and Current Handling Capability. A F J G C B D E H N O M K L DIM.

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Datasheet Details

Part number KMB060N40BA
Manufacturer KEC
File Size 51.37 KB
Description N-Channel Trench MOSFET
Datasheet download datasheet KMB060N40BA Datasheet
Additional preview pages of the KMB060N40BA datasheet.

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Full PDF Text Transcription

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SEMICONDUCTOR TECHNICAL DATA KMB060N40BA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for Back-light Inverter and power Supply. FEATURES VDSS=40V, ID=60A. Low Drain to Source ON Resistance. : RDS(ON)=8.5m (Max.) @ VGS=10V : RDS(ON)=11m (Max.) @ VGS=4.5V Super High Dense Cell Design. High Power and Current Handling Capability. A F J G C B D E H N O M K L DIM MILLIMETERS A 9.95 +_ 0.05 B 9.2+_ 0.1 C 8.00 P D 15.3+_ 0.2 E 4.9 +_0.2 RF 1.5 G 2.54 +_ 0.05 Q H 0.80 +_ 0.05 J 1.27 +_0.10 K 4.50 L 1.30 M 6.90 N 1.75 O 4.40 P 0.1 +_ 0.15 0.05 Q 2.4 +_ 0.1 R 2.
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