• Part: KMB6D0DN30QB
  • Manufacturer: KEC
  • Size: 372.37 KB
Download KMB6D0DN30QB Datasheet PDF
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KMB6D0DN30QB Key Features

  • IDP IS
  • Pulse Test : Pulse width 300 , Duty cycle 2%
  • 100 nA
  • pF nC ns
  • 0.75 1.2 V
  • Source Voltage VDS (V)
  • 55 C 15
  • Source Voltage VGS (V)

KMB6D0DN30QB Description

This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for portable equipment and DC-DC Converter Applications.