KMB6D0DN30QB - Dual N-Channel MOSFET

Product Overview

KEC

KMB6D0DN30QB Dual N-Channel MOSFET by KEC - Datasheet Preview — Datasheet preview – KMB6D0DN30QB

Datasheet Details

Part number	KMB6D0DN30QB
Manufacturer	KEC
File Size	372.37 KB
Description	Dual N-Channel MOSFET
Datasheet	KMB6D0DN30QB Datasheet
Additional preview pages of the KMB6D0DN30QB datasheet.

Product details

Description

This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

Features

VDSS=30V, ID=6A. Drain-Source ON Resistance. RDS(ON)=28m (Max. ) @VGS=10V RDS(ON)=42m (Max. ) @VGS=4.5V Super High Dense Cell Design High Power and Current Handing Capability.

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Published: Jun 21, 2016 |