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KMB6D0DN30QB - Dual N-Channel MOSFET

General Description

This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

It is mainly suitable for portable equipment and DC-DC Converter Applications.

Key Features

  • VDSS=30V, ID=6A. Drain-Source ON Resistance. RDS(ON)=28m (Max. ) @VGS=10V RDS(ON)=42m (Max. ) @VGS=4.5V Super High Dense Cell Design High Power and Current Handing Capability.

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Datasheet Details

Part number KMB6D0DN30QB
Manufacturer KEC
File Size 372.37 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet KMB6D0DN30QB Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SEMICONDUCTOR TECHNICAL DATA GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for portable equipment and DC-DC Converter Applications. FEATURES VDSS=30V, ID=6A. Drain-Source ON Resistance. RDS(ON)=28m (Max.) @VGS=10V RDS(ON)=42m (Max.) @VGS=4.5V Super High Dense Cell Design High Power and Current Handing Capability MAXIMUM RATING (Ta=25 Unless otherwise noted) CHARACTERISTIC SYMBOL PATING Drain Source Voltage VDSS 30 Gate Source Voltage Drain Current DC Pulsed Drain Source Diode Forward Current VGSS ID * IDP IS 20 6 30 1.