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KMB7D1DP30QA - Trench MOSFET

General Description

This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

It is mainly suitable for portable equipment and SMPS.

Key Features

  • VDSS=-30V, ID=-7.1A Drain-Source ON Resistance RDS(ON)=25m (Max. ) @ VGS=-10V RDS(ON)=41m (Max. ) @ VGS=-4.5V Super Hige Dense Cell Design 1 4 8 5 B1 B2 A DIM A B1 B2 D G H L P T.

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Datasheet Details

Part number KMB7D1DP30QA
Manufacturer KEC
File Size 499.88 KB
Description Trench MOSFET
Datasheet download datasheet KMB7D1DP30QA Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA KMB7D1DP30QA Dual P-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for portable equipment and SMPS. D P G H T L FEATURES VDSS=-30V, ID=-7.1A Drain-Source ON Resistance RDS(ON)=25m (Max.) @ VGS=-10V RDS(ON)=41m (Max.) @ VGS=-4.5V Super Hige Dense Cell Design 1 4 8 5 B1 B2 A DIM A B1 B2 D G H L P T MILLIMETERS _ 0.2 4.85 + _ 0.2 3.94 + _ 0.3 6.02 + _ 0.1 0.4 + 0.15+0.1/-0.05 _ 0.2 1.63 + _ 0.2 0.65 + 1.27 0.20+0.1/-0.05 MAXIMUM RATING (Ta=25 CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage ) SYMBOL VDSS VGSS N-Ch -30 22 -7.1 ID -5.7 IDP IS PD 0.