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KMB7D1DP30QA - Trench MOSFET

Datasheet Summary

Description

This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

It is mainly suitable for portable equipment and SMPS.

Features

  • VDSS=-30V, ID=-7.1A Drain-Source ON Resistance RDS(ON)=25m (Max. ) @ VGS=-10V RDS(ON)=41m (Max. ) @ VGS=-4.5V Super Hige Dense Cell Design 1 4 8 5 B1 B2 A DIM A B1 B2 D G H L P T.

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Datasheet preview – KMB7D1DP30QA

Datasheet Details

Part number KMB7D1DP30QA
Manufacturer KEC
File Size 499.88 KB
Description Trench MOSFET
Datasheet download datasheet KMB7D1DP30QA Datasheet
Additional preview pages of the KMB7D1DP30QA datasheet.

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www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA KMB7D1DP30QA Dual P-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for portable equipment and SMPS. D P G H T L FEATURES VDSS=-30V, ID=-7.1A Drain-Source ON Resistance RDS(ON)=25m (Max.) @ VGS=-10V RDS(ON)=41m (Max.) @ VGS=-4.5V Super Hige Dense Cell Design 1 4 8 5 B1 B2 A DIM A B1 B2 D G H L P T MILLIMETERS _ 0.2 4.85 + _ 0.2 3.94 + _ 0.3 6.02 + _ 0.1 0.4 + 0.15+0.1/-0.05 _ 0.2 1.63 + _ 0.2 0.65 + 1.27 0.20+0.1/-0.05 MAXIMUM RATING (Ta=25 CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage ) SYMBOL VDSS VGSS N-Ch -30 22 -7.1 ID -5.7 IDP IS PD 0.
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