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KMB8D2N60QA - Trench MOSFET

General Description

This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs.

It is mainly suitable for portable for portable equipment and SMPS.

Key Features

  • VDSS=60V, ID=8.2A. Drain-Source ON Resistance. RDS(ON)=22m (Max. ) @ VGS=10V RDS(ON)=27m (Max. ) @ VGS=4.5V Super High Dense Cell Design 1 4 B1 B2 8 5 A MOSFET Maximum Ratings (Ta=25.

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Datasheet Details

Part number KMB8D2N60QA
Manufacturer KEC
File Size 493.99 KB
Description Trench MOSFET
Datasheet download datasheet KMB8D2N60QA Datasheet

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Full PDF Text Transcription (Reference)

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www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA KMB8D2N60QA N-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for portable for portable equipment and SMPS. D P G H T L FEATURES VDSS=60V, ID=8.2A. Drain-Source ON Resistance. RDS(ON)=22m (Max.) @ VGS=10V RDS(ON)=27m (Max.) @ VGS=4.