KMB8D2N60QA - Trench MOSFET

Datasheet Summary

Description

This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs.

It is mainly suitable for portable for portable equipment and SMPS.

Features

VDSS=60V, ID=8.2A. Drain-Source ON Resistance. RDS(ON)=22m (Max. ) @ VGS=10V RDS(ON)=27m (Max. ) @ VGS=4.5V Super High Dense Cell Design 1 4 B1 B2 8 5 A MOSFET Maximum Ratings (Ta=25.

KEC

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Datasheet Details

Part number	KMB8D2N60QA
Manufacturer	KEC
File Size	493.99 KB
Description	Trench MOSFET
Datasheet	KMB8D2N60QA Datasheet
Additional preview pages of the KMB8D2N60QA datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA KMB8D2N60QA N-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for portable for portable equipment and SMPS. D P G H T L FEATURES VDSS=60V, ID=8.2A. Drain-Source ON Resistance. RDS(ON)=22m (Max.) @ VGS=10V RDS(ON)=27m (Max.) @ VGS=4.

Published: Oct 22, 2007 |