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KP8N60F Datasheet PDF

KEC KP8N60F

This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies.
Part No. KP8N60F
Datasheet KP8N60F Download
Manufacturer
KEC
Description N-Channel MOSFET
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KP8N60F datasheet page 1 preview

GENERAL DESCRIPTION

FEATURES

VDSS=600V, ID=8A Drain-Source ON Resistance : RDS(ON)(Max)=0.58 @VGS=10V Qg(typ.)= 16nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL RATING Drain-Source Voltage Gate-Source Voltage VDSS VGSS 600 30 @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above 25 ID IDP EAS EAR dv/dt PD 8* 5* 18* 125 3.7 4.5 37.9 0.3 Maximum Junction Temperature Storage Temperature Range Thermal Characteristics Tj Tstg 150 -55 150 Thermal Resistance, Junction-to-Case RthJC 3.3 Thermal Resistance, Junction-to-Ambient RthJA 62.5 * : Drain current limited by maximum junction temperature. UNIT V V A mJ mJ V/ns W W/ /W /W Q AC F O K E LM D NN 123 G B J R H 1. GATE 2. DRAIN 3. SOURCE DIM MILLIMETERS A 10.16 +_ 0.2 B 15.87 +_ 0.2 C 2.54 +_ 0.2 D 0.8 +_ 0.1 E 3.18 +_ 0.1 F 3.3 +_ 0.1 G 12.57 +_ 0.2 H 0.5 +_ 0.1 J 13.0 +_ 0.5 K 3.23 +_ 0.1 L 1.47 MAX M 1.47 MAX N 2.54 +_ 0.2 O 6.68 +_ 0.2 Q 4.7 +_ 0.2 R 2.76 +_ 0.2 * Single Gauge Lead Frame TO-220IS (1) PIN CONNECTION D G 2013.
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