KP8N60F - N-Channel MOSFET

Inchange Semiconductor

Key Features

Static drain-source on-resistance: RDS(on) ≤0.58Ω.
Enhancement mode.
Fast Switching Speed.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

KP8N60F n-channel mosfet by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	KP8N60F
Manufacturer	Inchange Semiconductor
File Size	241.72 KB
Description	N-Channel MOSFET
Datasheet	KP8N60F Datasheet

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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.58Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Suitable for active power factor correction and switching mode Power supplies ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 8 IDM Drain Current-Single Pulsed 18 PD Total Dissipation @TC=25℃ 37.9 Tj Max.