Inchange Semiconductor KP8N60F
N-Channel MOSFET
| Part No. | KP8N60F |
|---|---|
| Datasheet | KP8N60F Download |
| Manufacturer |  Inchange Semiconductor |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
●Static drain-source on-resistance: RDS(on) ≤0.58Ω●Enhancement mode
●Fast Switching Speed
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
●DESCRITION
●Suitable for active power factor correction and switching mode Power supplies
●
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 8 IDM Drain Current-Single Pulsed 18 PD Total Dissipation @TC=25℃ 37.9 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃●THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 3.3 62.5 UNIT ℃/W ℃/W KP8N60F isc website： 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID =...