Datasheet4U Logo Datasheet4U.com

KP8N60I - N-Channel MOSFET

Download the KP8N60I datasheet PDF. This datasheet also covers the KP8N60D variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

It is mainly suitable for active power factor correction and switching mode power supplies.

Key Features

  • VDSS=600V, ID=8A Drain-Source ON Resistance : RDS(ON)(Max)=0.58 @VGS=10V Qg(typ. )= 16nC.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (KP8N60D-KEC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number KP8N60I
Manufacturer KEC
File Size 384.88 KB
Description N-Channel MOSFET
Datasheet download datasheet KP8N60I Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
KP8N60F N-Channel MOSFET INCHANGE
KP800A Phase Control Thyristor HUAJING
KP800A thyristor ETC
KP803 HIGH POWER THYRISTOR YZPST
KP804 HIGH POWER THYRISTOR YZPST

Other Datasheets by KEC

Part Number Description
KP8N60D N-Channel MOSFET
KP8N60F N-Channel MOSFET
KP8N65D N-Channel MOSFET
KP8N65I N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SEMICONDUCTOR TECHNICAL DATA General Description This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. FEATURES VDSS=600V, ID=8A Drain-Source ON Resistance : RDS(ON)(Max)=0.58 @VGS=10V Qg(typ.)= 16nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL RATING Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above 25 VDSS VGSS ID IDP EAS EAR dv/dt PD 600 30 8 5 18* 125 3.7 4.5 73.5 0.