KEC KRC234M
EPITAXIAL PLANAR NPN TRANSISTOR
| Part No. | KRC234M |
|---|---|
| Datasheet | KRC234M Download |
| Manufacturer |  KEC |
| Description | EPITAXIAL PLANAR NPN TRANSISTOR |
| Buy | Stock & Price |
FEATURES
ᴌWith Built-in Bias Resistors. ᴌSimplify Circuit Design. ᴌReduce a Quantity of Parts and Manufacturing Process. EQUIVALENT CIRCUIT R1 B C E J K D KRC231M~KRC235M EPITAXIAL PLANAR NPN TRANSISTOR B F A HM C EE 1 2 3N L 1. EMITTER 2. COLLECTOR 3. BASE G O DIM MILLIMETERS A 3.20 MAX B 4.30 MAX C 0.55 MAX D 2.40+_ 0.15 E 1.27 F 2.30 G 14.00+_ 0.50 H 0.60 MAX J 1.05 K 1.45 L 25 M 0.80 N 0.55 MAX O 0.75 TO-92M MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC PC Tj Tstg RATING 30 15 5 600 400 150 -55ᴕ150 UNIT V V V mA mW ᴱ ᴱ 2000. 8. 23 Revision No : 1 1/4 KRC231M~KRC235MELECTRICAL CHARACTERISTICS
(Ta=25ᴱ) CHARACTERISTIC Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Collector-Emitter Saturation Voltage DC Current Gain KRC231M KRC232M Input Resistor KRC233M KRC234M KRC235M Transition Frequency On Resistance Note : * Characteristic of Transistor Only.