KRC234M
FEATURES
ᴌWith Built-in Bias Resistors. ᴌSimplify Circuit Design. ᴌReduce a Quantity of Parts and Manufacturing Process.
EQUIVALENT CIRCUIT
R1 B
KRC231M~KRC235M
EPITAXIAL PLANAR NPN TRANSISTOR
1 2 3N L
1. EMITTER 2. COLLECTOR 3. BASE
O DIM MILLIMETERS A 3.20 MAX B 4.30 MAX C 0.55 MAX D 2.40+_ 0.15 E 1.27
F 2.30 G 14.00+_ 0.50 H 0.60 MAX J 1.05 K 1.45
L 25 M 0.80 N 0.55 MAX
O 0.75
TO-92M
MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range
SYMBOL VCBO VCEO VEBO IC PC Tj Tstg
RATING 30 15 5 600 400 150
-55ᴕ150
UNIT V V V m A m W ᴱ ᴱ
2000. 8. 23
Revision No : 1
1/4
KRC231M~KRC235M
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Collector-Emitter Saturation...
