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KTA2014V - EPITAXIAL PLANAR PNP TRANSISTOR

Key Features

  • Excellent hFE Linearity : hFE(0.1mA)/hFE(2mA)=0.95(Typ. ). Low Noise : NF=1dB(Typ. ), 10dB(Max. ). Complementary to KTC4075V. Very Small Package.

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Datasheet Details

Part number KTA2014V
Manufacturer KEC
File Size 294.88 KB
Description EPITAXIAL PLANAR PNP TRANSISTOR
Datasheet download datasheet KTA2014V Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Excellent hFE Linearity : hFE(0.1mA)/hFE(2mA)=0.95(Typ.). Low Noise : NF=1dB(Typ.), 10dB(Max.). Complementary to KTC4075V. Very Small Package. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature VCBO VCEO VEBO IC IB PC Tj Storage Temperature Range Tstg RATING -50 -50 -5 -150 -30 100 150 -55 150 UNIT V V V mA mA mW A G H KTA2014V EPITAXIAL PLANAR PNP TRANSISTOR K JD E B 2 DIM MILLIMETERS A 1.2 +_0.05 B 0.8 +_0.05 1 3 C 0.5 +_ 0.05 D 0.3 +_ 0.05 E 1.2 +_ 0.05 G 0.8 +_ 0.05 PP H 0.40 J 0.12+_ 0.05 K 0.2 +_ 0.05 P5 1. EMITTER 2. BASE 3.