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SEMICONDUCTOR
TECHNICAL DATA
AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING
FEATURES Complementary to KTD882.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage Collector-Emitter Voltage
VCBO VCEO
Emitter-Base Voltage
VEBO
Collector Current
DC Pulse (Note)
IC ICP
Base Current (DC)
IB
Collector Power Dissipation
Ta=25 Tc=25
PC
Junction Temperature
Tj
Storage Temperature Range
Tstg
Note : Pulse Width 10mS, Duty Cycle 50%.
RATING -40 -30 -5 -3 -7 -0.6 1.5 10 150
-55 150
UNIT V V V
A
A
W
KTB772
EPITAXIAL PLANAR PNP TRANSISTOR
A B C
H J K
D E
F G
L
M
O NP
12 3
1. EMITTER 2. COLLECTOR 3. BASE
DIM A B C D E F G H J K L M N O P
MILLIMETERS 8.3 MAX
5.8
0.7 Φ3.2+_ 0.1
3.5 11.0 +_ 0.3
2.9 MAX
1.0 MAX
1.9 MAX 0.75 +_ 0.15 15.50+_ 0.5
2.3 +_ 0.1 0.