The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
FEATURES ᴌLow Saturation Voltage
: VCE(sat)=1.0V(Max.) (IC=2A, IB=0.2A). ᴌComplementary to KTA1036.
MAXIMUM RATINGS (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current
VCBO VCEO VEB0
IC IB
Collector Power Dissipation
Ta=25ᴱ Tc=25ᴱ
Junction Temperature
PC Tj
Storage Temperature Range
Tstg
RATING 60 60 7 3 0.5 2 30 150
-55ᴕ150
UNIT V V V A A
W
ᴱ ᴱ
H
E Q
KTC2016
EPITAXIAL PLANAR NPN TRANSISTOR
A R S
F B
D
T
L CC
MM K
123 J
1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER
O NG
P
DIM A B
C
D E F G H
J K L M
N
O P Q R S T
MILLIMETERS 10.30 MAX
15.30 MAX
0.80 Φ3.60 +_ 0.20
3.00 6.70 MAX 13.60+_ 0.50
5.60 MAX
1.37 MAX 0.50
1.50 MAX 2.54
4.
KTC2016 Datasheet
