KEC KTC2016
EPITAXIAL PLANAR NPN TRANSISTOR
FEATURES
ᴌLow Saturation Voltage : VCE(sat)=1.0V(Max.) (IC=2A, IB=0.2A). ᴌComplementary to KTA1036.MAXIMUM RATINGS
(Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current VCBO VCEO VEB0 IC IB Collector Power Dissipation Ta=25ᴱ Tc=25ᴱ Junction Temperature PC Tj Storage Temperature Range Tstg RATING 60 60 7 3 0.5 2 30 150 -55ᴕ150 UNIT V V V A A W ᴱ ᴱ H E Q KTC2016 EPITAXIAL PLANAR NPN TRANSISTOR A R S F B D T L CC MM K 123 J 1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER O NG P DIM A B C D E F G H J K L M N O P Q R S T MILLIMETERS 10.30 MAX 15.30 MAX 0.80 Φ3.60 +_ 0.20 3.00 6.70 MAX 13.60+_ 0.50 5.60 MAX 1.37 MAX 0.50 1.50 MAX 2.54 4.70 MAX 2.60 1.50 MAX 1.50 9.50+_ 0.20 8.00+_ 0.20 2.90 MAX TO-220ABELECTRICAL CHARACTERISTICS
(Ta=25ᴱ) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current Emitter Cut-o