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KTC2016 - NPN Transistors

Key Features

  • Low Collector Emitter Saturation Voltage.
  • Complementary to KTA1036 (45 ) 10.08 ± 0.30 13.08 ± 0.20 (1.00).
  • Absolute Maximum Ratings Ta = 25℃ 1.27 ± 0.10 123 1.52 ± 0.10 2.54TYP [2.54 ± 0.20 ] 0.80 ± 0.10 2.54TYP [2.54 ± 0.20 ] 10.00 ± 0.20 0.50 +0.10.
  • 0.05 2.40 ± 0.20 1. Base 2. Collector 3. Emitter Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Base Current Collector Power Dissipation Junction.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SMD Type Transistors NPN Transistors KTC2016 TO-220 9.90 ± 0.20 (8.70) ø3.60 ± 0.10 4.50 ± 0.20 1.30 +0.10 –0.05 2.80 ± 0.10 (1.70) 1.30 ± 0.10 (3.00) (3.70) 15.90 ± 0.20 18.95MAX. 9.20 ± 0.20 (1.46) ■ Features ● Low Collector Emitter Saturation Voltage. ● Complementary to KTA1036 (45 ) 10.08 ± 0.30 13.08 ± 0.20 (1.00) ■ Absolute Maximum Ratings Ta = 25℃ 1.27 ± 0.10 123 1.52 ± 0.10 2.54TYP [2.54 ± 0.20 ] 0.80 ± 0.10 2.54TYP [2.54 ± 0.20 ] 10.00 ± 0.20 0.50 +0.10 –0.05 2.40 ± 0.20 1. Base 2. Collector 3.