Datasheet Summary
SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
Features
ᴌHigh Breakdown Voltage : VCEO=100V. ᴌLow Collector Saturation Voltage :VCE(sat)=2.0V(Max.). ᴌplementary to KTA1038.
MAXIMUM RATINGS (Ta=25ᴱ) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Base Current CollectorPower Dissipation
(Tc=25ᴱ) Junction Temperature Storage Temperature Range
SYMBOL VCBO VCEO VEB0 IC IE IB
Tj Tstg
RATING 100 100 5 5 -5 0.5
150 -55ᴕ150
UNIT V V V A A A
ᴱ ᴱ
EPITAXIAL PLANAR NPN TRANSISTOR
L CC
MM K
123 J
1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER
O NG
DIM A B
D E F G...