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SEMICONDUCTOR
TECHNICAL DATA
KTC2026
EPITAXIAL PLANAR NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
FEATURES ᴌLow Collector Saturation Voltage
: VCE(sat)=1.0V(Max.) at IC=2A, IB=0.2A. ᴌComplementary to KTA1046.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current
VCBO VCEO VEBO
IC IB
Collector Power Dissipation
Ta=25ᴱ Tc=25ᴱ
Junction Temperature
PC Tj
Storage Temperature Range
Tstg
RATING 60 60 7 3 0.5 2 20 150
-55ᴕ150
UNIT V V V A A
W
ᴱ ᴱ
O Q
A U
E
K
LL
M DD
NN T
T
123
J
GF B P
C
DIM MILLIMETERS
A 10.30 MAX
B 15.30 MAX C 2.70Ź0.30 S D 0.85 MAX
E Ѹ3.20Ź0.20 F 3.00Ź0.30
G 12.30 MAX
T
RH
0.75 MAX
J 13.60Ź0.50
K 3.90 MAX
L 1.20
VM N
1.30 2.54
O 4.50Ź0.20
P 6.
KTC2026 Datasheet
