KTC2020D - Silicon NPN Power Transistor

Inchange Semiconductor

General Description

High Breakdown Voltage- : V(BR)CBO= 60V(Min) High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Ultrahigh-definition CRT display horizontal deflection output applications ABSOLUTE MAXIMUM RA

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Datasheet Details

Part number	KTC2020D
Manufacturer	Inchange Semiconductor
File Size	286.61 KB
Description	Silicon NPN Power Transistor
Datasheet	KTC2020D Datasheet

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isc Silicon NPN Power Transistor KTC2020D DESCRIPTION ·High Breakdown Voltage- : V(BR)CBO= 60V(Min) ·High Switching Speed ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Ultrahigh-definition CRT display horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7.0 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3.0 A 20 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.