Datasheet Details
| Part number | KTC2026 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 196.62 KB |
| Description | NPN Transistor |
| Datasheet | KTC2026-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistors.
| Part number | KTC2026 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 196.62 KB |
| Description | NPN Transistor |
| Datasheet | KTC2026-INCHANGE.pdf |
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·Low Saturation Voltage- : VCE(sat)=1.0V(Max)@ (IC= 2A, IB= 0.2A) ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min) ·Complement to Type KTA1046 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose applications .
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous IB Base Current Collector Power Dissipation TC=25℃ PC Collector Power Dissipation Ta=25℃ Tj Junction Temperature Tstg Storage Temperature Range 60 V 7 V 3 A 0.5 A 25 W 2 150 ℃ -55~150 ℃ KTC2026 isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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KTC2026 | NPN Transistor | JCET |
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KTC2026 | NPN Transistors | Kexin |
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KTC2026 | NPN Plastic-Encapsulated Transistor | SeCoS |
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KTC2026 | EPITAXIAL PLANAR NPN TRANSISTOR | KEC |
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