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KTC2026 - NPN Transistor

General Description

Low Saturation Voltage- : VCE(sat)=1.0V(Max)@ (IC= 2A, IB= 0.2A) Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min) Complement to Type KTA1046 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in gener

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isc Silicon NPN Power Transistors DESCRIPTION ·Low Saturation Voltage- : VCE(sat)=1.0V(Max)@ (IC= 2A, IB= 0.2A) ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min) ·Complement to Type KTA1046 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose applications . ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous IB Base Current Collector Power Dissipation TC=25℃ PC Collector Power Dissipation Ta=25℃ Tj Junction Temperature Tstg Storage Temperature Range 60 V 7 V 3 A 0.5 A 25 W 2 150 ℃ -55~150 ℃ KTC2026 isc website： www.iscsemi.