| Part Number | KTC2020D Datasheet |
|---|---|
| Manufacturer | Kexin Semiconductor |
| Overview | SMD Type NPN Transistors KTC2020D TTrraannssiissttoorrss Features Low VCE(sat): 1.0V General purpose amplifier for surface mount applications. Complementary to KTA1040D. Absolute Maximum Ratings T. Low VCE(sat): 1.0V General purpose amplifier for surface mount applications. Complementary to KTA1040D. Absolute Maximum Ratings Ta = 25 Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Collector Power Dissipation Junction Temperat. |
KTC2020D Datasheet and Specifications PDF
The KTC2020D is a NPN Transistors.
| Part Number | KTC2020D Datasheet |
|---|---|
| Description | EPITAXIAL PLANAR NPN TRANSISTOR |
| Manufacturer | KEC |
| Overview | SEMICONDUCTOR TECHNICAL DATA KTC2020D/L EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. DPAK FOR SVRFACE MOUNT APPLICATIONS. FEATURES Low Collector Saturation Voltage : VCE(sat)=1.0V(Ma. Low Collector Saturation Voltage : VCE(sat)=1.0V(Max.) at IC=2A, IB=0.2A. Straight Lead (IPAK, "L" Suffix) Complementary to KTA1040D/L. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current VCBO VCEO VE. |
| Part Number | KTC2020D Datasheet |
|---|---|
| Description | Silicon NPN Power Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview |
·High Breakdown Voltage-
: V(BR)CBO= 60V(Min) ·High Switching Speed ·High Reliability ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Ultrahigh-defin.
Base-Emitter On Voltage
IC= 0.5A ; VCE= 5V
ICBO
Collector Cutoff Current
VCB= 60V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= 7.0V; IC= 0
hFE
DC current gain
IC= 0.5A ; VCE= 5V
* hFE Classifications Y GR 100-200 150-300 KTC2020D MIN MAX UNIT 60 V 1.0 V 1.0 V 100 μA 100 μA 1. |