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SEMICONDUCTOR
TECHNICAL DATA
FOR MUTING AND SWITCHING APPLICATION.
FEATURES High Emitter-Base Voltage : VEBO=25V(Min.) High Reverse hFE : Reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) Low on Resistance : RON=1 (Typ.), (IB=5mA)
MAXIMUM RATING (Ta=25 ) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range
SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg
RATING 50 20 25 300 60 625 150
-55 150
UNIT V V V mA mA mW
KTC2874
SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE
BC
E G LA
D d
PP
DIM A B C d D E G L P T
MILLIMETERS 4.7 MAX 5.1 MAX 4.1 MAX 0.45 0.55 MAX 0.8 1.8 12.7 MIN 1.27 0.45
1 23
T
1. EMITTER 2. COLLECTOR 3.
KTC2874 Datasheet
