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SEMICONDUCTOR
TECHNICAL DATA
FOR MUTING AND SWITCHING APPLICATION.
FEATURES High Emitter-Base Voltage : VEBO=25V(Min.) High Reverse hFE : Reverse hFE=150(Typ.) (VCE=-2V, IC=-2mA) Low on Resistance : RON=1 (Typ.), (IB=5mA)
MAXIMUM RATING (Ta=25 ) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range
SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg
RATING 50 20 25 300 60 150 150
-55 150
UNIT V V V mA mA mW
KTC2875
EPITAXIAL PLANAR NPN TRANSISTOR
E L BL
DIM MILLIMETERS A 2.93+_ 0.20
B 1.30+0.20/-0.15
A G H
D
23
C 1.30 MAX D 0.40+0.15/-0.05
E 2.40+0.30/-0.20 1 G 1.90
H 0.95
J 0.13+0.10/-0.05
K 0.00 ~ 0.10 Q
PP
L 0.55
M 0.20 MIN
N 1.00+0.20/-0.
KTC2875 Datasheet
