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SEMICONDUCTOR
TECHNICAL DATA
LOW NOISE AMPLIFIER APPLICATION.
FEATURES Excellent hFE Linearity : hFE(2)=100(Typ.) at VCE=6V, IC=150mA : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). Low Noise : NF=0.2dB(Typ.). f=(1kHz). Complementary to KTA1266L. (O,Y,GR class)
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
VCBO VCEO VEBO
Collector Current
IC
Emitter Current
IE
Collector Power Dissipation
PC
Junction Temperature
Tj
Storage Temperature Range
Tstg
RATING 60 50 5 150 -150 625 150
-55 150
UNIT V V V mA mA mW
L M
C
KTC3198L
EPITAXIAL PLANAR NPN TRANSISTOR
BC
JA
KE G
D
H
FF
1 23
N DIM MILLIMETERS A 4.70 MAX B 4.80 MAX C 3.70 MAX D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 J 14.00 +_0.50 K 0.55 MAX L 2.30 M 0.45 MAX N 1.