KTC3198A - EPITAXIAL PLANAR NPN TRANSISTOR

KEC

Key Features

Excellent hFE Linearity : hFE(2)=100(Typ. ) at VCE=6V, IC=150mA : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ. ). Low Noise : NF=1dB(Typ. ). at f=1kHz. Complementary to KTA1266A.

KTC3198A epitaxial planar npn transistor by KEC - Datasheet Preview

Datasheet Details

Part number	KTC3198A
Manufacturer	KEC
File Size	64.46 KB
Description	EPITAXIAL PLANAR NPN TRANSISTOR
Datasheet	KTC3198A Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
KTC3198	Silicon NPN transistor	BLUE ROCKET ELECTRONICS
KTC3198	Transistors	Jiangsu Changjiang
KTC3198	NPN Plastic Encapsulated Transistor	SeCoS
KTC3198	NPN Transistors	Kexin
KTC3198-BL	NPN Bipolar Transistor	Taiwan Semiconductor

Other Datasheets by KEC

Part Number	Description
KTC3198	EPITAXIAL PLANAR NPN TRANSISTOR
KTC3198L	EPITAXIAL PLANAR NPN TRANSISTOR
KTC3190	EPITAXIAL PLANAR NPN TRANSISTOR
KTC3191	NPN TRANSISTOR
KTC3192	EPITAXIAL PLANAR NPN TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Excellent hFE Linearity : hFE(2)=100(Typ.) at VCE=6V, IC=150mA : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). Low Noise : NF=1dB(Typ.). at f=1kHz. Complementary to KTA1266A. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature VCBO VCEO VEBO IC IB PC Tj 60 50 5 150 50 400 150 Storage Temperature Range Tstg -55 150 UNIT V V V mA mA mW L M C KTC3198A EPITAXIAL PLANAR NPN TRANSISTOR BC JA KE G D H FF 1 23 N DIM MILLIMETERS A 4.70 MAX B 4.80 MAX C 3.70 MAX D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 J 14.00 +_0.50 K 0.55 MAX L 2.30 M 0.45 MAX N 1.00 1.