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SEMICONDUCTOR
TECHNICAL DATA
FEATURE Low Collector-Emitter Saturation Voltage VCE(sat). High Collector Current Capability : IC and ICP. Higher Efficiency Leading to Less Heat Generation.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC Pulse
Base Current
Collector Power Dissipation**
Junction Temperature
VCBO VCEO VEBO
IC ICP IB PC Tj
130 V
100 V
5V
1 A
3
300 mA
350 mW
150
Storage Temperature Range
Tstg -55 150
Note : * Package Mounted on 99.5% Alumina 10 8 0.6mm.
MARKING
Lot No.
KMBType Name
KTC3571S
EPITAXIAL PLANAR NPN TRANSISTOR
E L BL
DIM MILLIMETERS A 2.93+_ 0.20
B 1.30+0.20/-0.15
A G H
D
23
C 1.30 MAX D 0.40+0.15/-0.05
E 2.40+0.30/-0.20 1 G 1.90
H 0.
KTC3571S Datasheet
