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SEMICONDUCTOR
TECHNICAL DATA
FEATURE Low Collector-Emitter Saturation Voltage VCE(sat). High Collector Current Capability : IC and ICP. Higher Efficiency Leading to Less Heat Generation.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC Pulse
Base Current
Collector Power Dissipation
Junction Temperature
VCBO VCEO VEBO
IC ICP IB PC Tj
Storage Temperature Range
Tstg
RATING 120 100 5 1 3 300 1 150
-55 150
UNIT V V V
A
mA W
O D
KTC3572
EPITAXIAL PLANAR NPN TRANSISTOR
BD
P DEPTH:0.2
C
Q K
FF
HH M EM
123
HL
G JA R
DIM MILLIMETERS
A 7.20 MAX
B 5.20 MAX
C 0.60 MAX
D 2.50 MAX
E 1.15 MAX
F 1.27
S G 1.70 MAX
H 0.55 MAX J 14.00+_ 0.50
K 0.35 MIN L 0.75+_ 0.10
M4
N 25
HO
1.
KTC3572 Datasheet
