KTC4072E Datasheet | KEC

FEATURES High Current. Low VCE(sat). : VCE(sat) 250m V at IC=200m A/IB=10m A. plementary to KTA2012E. EPITAXIAL PLANAR NPN TRANSISTOR MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range - Single pulse Pw=1m S. VCBO VCEO VEBO IC ICP - PC Tj Tstg RATING 15 12 6 500 1 100 150 -55 150 UNIT V V V m A A m W ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Collector Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency ICBO V(BR)CBO V(BR)CEO V(BR)EBO h FE VCE(sat) f T Collector Output Capacitance Cob TEST CONDITION VCB=15V, IE=0 IC=10 A IC=1m A IE=10 A VCE=2V, IC=10m A IC=200m A, IB=10m A VCE=2V, IC=10m A, f T=100MHz VCB=10V, IE=0, f=1MHz MIN. 15 12 6 - TYP. 90 320 7.5 MAX. 100 680 250 - UNIT n A V V V m V MHz p F 2014. 3. 31 Revision No : 3 1/3 2014. 3. 31 Revision No : 3 2/3 2014. 3. 31 Revision No :...