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SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION.
FEATURES High Current. Low VCE(sat). : VCE(sat) 250mV at IC=200mA/IB=10mA. Complementary to KTA2012E.
KTC4072E
EPITAXIAL PLANAR NPN TRANSISTOR
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
Collector Current
Collector Power Dissipation Junction Temperature Storage Temperature Range * Single pulse Pw=1mS.