KTC4072V Datasheet | KEC

FEATURES High Current. Low VCE(sat). : VCE(sat) 250m V at IC=200m A/IB=10m A. plementary to KTA2012V. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range - Single pulse Pw=1m S. VCBO VCEO VEBO IC ICP - PC Tj Tstg RATING 15 12 6 500 1 100 150 -55 150 UNIT V V V m A A m W EPITAXIAL PLANAR NPN TRANSISTOR 2 DIM MILLIMETERS A 1.2 +_0.05 B 0.8 +_0.05 1 3 C 0.5 +_ 0.05 D 0.3 +_ 0.05 E 1.2 +_ 0.05 G 0.8 +_ 0.05 H 0.40 J 0.12+_ 0.05 K 0.2 +_ 0.05 P5 1. EMITTER 2. BASE 3. COLLECTOR Marking Type Name ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Collector Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency ICBO V(BR)CBO V(BR)CEO V(BR)EBO h FE VCE(sat) f T Collector Output Capacitance Cob TEST CONDITION VCB=15V, IE=0 IC=10 A IC=1m A IE=10 A VCE=2V, IC=10m A IC=200m A, IB=10m A VCE=2V, IC=10m A, f T=100MHz VCB=10V, IE=0, f=1MHz MIN. 15 12 6 - TYP....