Low Saturation Voltage : VCE(sat)=0.5V(Max. ) (IC=1A) High Speed Switching Time : tstg=1.0 S(Typ. ) PC=1 2W (Mounted on Ceramic Substrate) Small Flat Package. Complementary to KTA1666.
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30Ω J B
EU
SEMICONDUCTOR
TECHNICAL DATA
POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS.
FEATURES Low Saturation Voltage : VCE(sat)=0.5V(Max.) (IC=1A) High Speed Switching Time : tstg=1.0 S(Typ.) PC=1 2W (Mounted on Ceramic Substrate) Small Flat Package. Complementary to KTA1666.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current
Collector Power Dissipation
Junction Temperature
VCBO VCEO VEBO
IC IB PC PC * Tj
50 50 5 2 0.4 500 1 150
Storage Temperature Range
Tstg -55 150
PC* : KTC4379 mounted on ceramic substrate (250mm2x0.8t)
UNIT V V V A A mW W
KTC4379
EPITAXIAL PLANAR NPN TRANSISTOR
AC H
G
DD K
FF
1 23
DIM A B C D E F G H J K
MILLIMETERS 4.70 MAX 2.50 +_0.
KTC4379 Datasheet
