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KTC811T - EPITAXIAL PLANAR NPN TRANSISTOR

Key Features

  • Excellent hFE Linearity : hFE(2)=25(Min. ) at VCE=6V, IC=400mA. Complementary to KTA711T.

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Datasheet Details

Part number KTC811T
Manufacturer KEC
File Size 43.93 KB
Description EPITAXIAL PLANAR NPN TRANSISTOR
Datasheet download datasheet KTC811T Datasheet

Full PDF Text Transcription for KTC811T (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for KTC811T. For precise diagrams, and layout, please refer to the original PDF.

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Excellent hFE Linearity : hFE(2)=25(Min.) at VCE=6V, IC=400mA. Complementary to ...

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hFE Linearity : hFE(2)=25(Min.) at VCE=6V, IC=400mA. Complementary to KTA711T. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature VCBO VCEO VEBO IC IE PC * Tj 35 30 5 500 -500 0.9 150 Storage Temperature Range Tstg -55 150 * Package mounted on a ceramic board (600 0.8 ) UNIT V V V mA mA W A F GG KTC811T EPITAXIAL PLANAR NPN TRANSISTOR E K BK 16 25 34 H JJ 1. Q1 EMITTER 2. Q1 BASE 3. Q2 COLLECTOR 4. Q2 EMITTER 5. Q2 BASE 6. Q1 COLLECTOR I D DIM A B C D E F G H I J K L MIL

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