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SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.
FEATURES Excellent hFE Linearity : hFE(2)=25(Min.) at VCE=6V, IC=400mA. Complementary to KTA711T.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature
VCBO VCEO VEBO
IC IE PC * Tj
35 30 5 500 -500 0.9 150
Storage Temperature Range
Tstg -55 150
* Package mounted on a ceramic board (600 0.8 )
UNIT V V V mA mA W
A F GG
KTC811T
EPITAXIAL PLANAR NPN TRANSISTOR
E K BK
16
25
34
H JJ
1. Q1 EMITTER 2. Q1 BASE 3. Q2 COLLECTOR 4. Q2 EMITTER 5. Q2 BASE 6. Q1 COLLECTOR
I
D
DIM A B C D E
F G H I J K L
MILLIMETERS 2.9+_ 0.2
1.6+0.2/-0.1 0.70+_ 0.05
0.4+_ 0.
KTC811T Datasheet
