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KTC812T - EPITAXIAL PLANAR NPN TRANSISTOR

Features

  • High Emitter-Base Voltage : VEBO=25V(Min. ) High Reverse hFE : Reverse hFE=150(Typ. ) (VCE=-2V, IC=-4mA) Low on Resistance : RON=1 (Typ. ), (IB=5mA).

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Datasheet Details

Part number KTC812T
Manufacturer KEC
File Size 48.56 KB
Description EPITAXIAL PLANAR NPN TRANSISTOR
Datasheet download datasheet KTC812T Datasheet
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Full PDF Text Transcription

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SEMICONDUCTOR TECHNICAL DATA FOR MUTING AND SWITCHING APPLICATION. FEATURES High Emitter-Base Voltage : VEBO=25V(Min.) High Reverse hFE : Reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) Low on Resistance : RON=1 (Typ.), (IB=5mA) MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage VCBO 50 Collector-Emitter Voltage VCEO 20 Emitter-Base Voltage VEBO 25 Collector Current IC 300 Base Current IB 60 Collector Power Dissipation PC * 0.9 Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 * Package mounted on a ceramic board (600 0.8 ) EQUIVALENT CIRCUIT (TOP VIEW) 65 4 UNIT V V V mA mA W Q1 Q2 C L A F GG KTC812T EPITAXIAL PLANAR NPN TRANSISTOR E K BK 16 25 34 H JJ 1. Q1 EMITTER 2. Q1 BASE 3. Q2 COLLECTOR 4. Q2 EMITTER 5. Q2 BASE 6.
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