Including two devices in TES6. (Thin Extreme Super mini type with 6 leads. ) With Built-in bias resistors. Simplify circuit design. Reduce a quantity of parts and manufacturing process.
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SEMICONDUCTOR
TECHNICAL DATA
KTX212E
EPITAXIAL PLANAR NPN TRANSISTOR
SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES Including two devices in TES6. (Thin Extreme Super mini type with 6 leads.) With Built-in bias resistors. Simplify circuit design. Reduce a quantity of parts and manufacturing process.
EQUIVALENT CIRCUIT
Q1 C
Q2
OUT
B
R1 IN
Q2 R1=2.2KΩ
R2=2.2KΩ
R2
E COMMON
EQUIVALENT CIRCUIT (TOP VIEW)
65 4
Q1 Q2
12 3
Q1 MAXIMUM RATING (Ta=25 ) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
Collector Current
* Single pulse Pw=1mS.
KTX212E Datasheet
