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SEMICONDUCTOR
TECHNICAL DATA
General Description
This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter, Synchronous Rectification and a load switch in battery powered applications FEATURES
VDSS= 75V, ID= 170A Drain-Source ON Resistance : RDS(ON)=3.4m (Max.) @VGS = 10V
KU034N08P
N-ch Trench MOS FET
K
MAXIMUM RATING (Tc=25
CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25
)
SYMBOL VDSS VGSS ID 106 IDP EAS EAR dv/dt PD 424* 1,000 19 4.5 192 1.
KU034N08P Datasheet
