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KU034N08P - N-ch Trench MOS FET

General Description

This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

Key Features

  • VDSS= 75V, ID= 170A Drain-Source ON Resistance : RDS(ON)=3.4m (Max. ) @VGS = 10V KU034N08P N-ch Trench MOS FET K.

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Datasheet Details

Part number KU034N08P
Manufacturer KEC
File Size 1.03 MB
Description N-ch Trench MOS FET
Datasheet download datasheet KU034N08P Datasheet

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Full PDF Text Transcription (Reference)

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SEMICONDUCTOR TECHNICAL DATA General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter, Synchronous Rectification and a load switch in battery powered applications FEATURES VDSS= 75V, ID= 170A Drain-Source ON Resistance : RDS(ON)=3.4m (Max.) @VGS = 10V KU034N08P N-ch Trench MOS FET K MAXIMUM RATING (Tc=25 CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 ) SYMBOL VDSS VGSS ID 106 IDP EAS EAR dv/dt PD 424* 1,000 19 4.5 192 1.