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KU047N08P - N-ch Trench MOS FET

Datasheet Summary

Description

This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

Features

  • VDSS= 75V, ID= 130A Drain-Source ON Resistance : RDS(ON)=4.7m (Max. ) @VGS = 10V D N N A KU047N08P N-ch Trench MOS FET O C F E G B Q DIM.

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Datasheet Details

Part number KU047N08P
Manufacturer KEC
File Size 429.05 KB
Description N-ch Trench MOS FET
Datasheet download datasheet KU047N08P Datasheet
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Full PDF Text Transcription

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SEMICONDUCTOR TECHNICAL DATA General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter, Synchronous Rectification and a load switch in battery powered applications FEATURES VDSS= 75V, ID= 130A Drain-Source ON Resistance : RDS(ON)=4.7m (Max.) @VGS = 10V D N N A KU047N08P N-ch Trench MOS FET O C F E G B Q DIM MILLIMETERS _ 0.2 9.9 + A B C D E I K M L J H P F G H I J K L M N O 15.95 MAX 1.3+0.1/-0.05 _ 0.1 0.8 + _ 0.2 3.6 + _ 0.1 2.8 + 3.7 0.5+0.1/-0.05 1.5 _ 0.3 13.08 + 1.46 _ 0.1 1.4 + _ 0.1 1.27 + _ 0.2 2.54 + _ 0.2 4.5 + _ 0.2 2.4 + _ 0.2 9.
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