Datasheet4U Logo Datasheet4U.com

KU086N10P - N-Channel MOSFET

Datasheet Summary

Description

This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

Features

  • VDSS= 100V, ID= 95A Drain-Source ON Resistance : RDS(ON)=8.6m (Max. ) @VGS = 10V.

📥 Download Datasheet

Datasheet preview – KU086N10P

Datasheet Details

Part number KU086N10P
Manufacturer KEC
File Size 1.24 MB
Description N-Channel MOSFET
Datasheet download datasheet KU086N10P Datasheet
Additional preview pages of the KU086N10P datasheet.

📁 Similar Datasheet

  • KU048N03D - N-Ch Trench MOSFET (KEC semiconductor)
  • KU054N03D - N-Ch Trench MOSFET (KEC semiconductor)
  • KU056N03Q - N-Ch Trench MOSFET (KEC semiconductor)
  • KU063N03Q - N-channel MOSFET (KEC semiconductor)
  • KU068N03D - N-Ch Trench MOSFET (KEC semiconductor)
Other Datasheets by KEC

Full PDF Text Transcription

Click to expand full text
SEMICONDUCTOR TECHNICAL DATA General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter, Synchronous Rectification and a load switch in battery powered applications FEATURES VDSS= 100V, ID= 95A Drain-Source ON Resistance : RDS(ON)=8.6m (Max.
Published: |