DESCRIPTION
Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt. FEATURES
RDS(ON)=23mΩ@VGS=10V. Ultra low gate charge (typical 30nC) Low reverse transfer capacitance Fast switching capability 100％ avalanche energy specified Improved dv/dt capability 3. Pin configuration Pin 1 2 3 Function Gate Drain Source 1 of 9 Free Datasheet KIA 50 Amps, 60 Volts N-CHANNEL MOSFET 50N06 SEMICONDUCTORS 6. Absolute maximum ratings Parameter Drain to source voltage Gate to source voltage TJ=25 ºCID50A Continuous drain current TJ=100 ºCID35A Drain current pulsed (note1)IDM200A Single pulsed avalanche energy (note2)EAS480mJ Repetitive avalanche energy (note1)EAR13mJ Peak diode recovery dv/dt (note3)dv/dt7V/ns Total power dissipation(TJ=25 ºC)PD130W Derating factor above 25 ºCPD0.9W/ ºC Operating junction temperatureTJ-55 ~ +150ºC Storage temperatureTSTG-55 ~ +150ºC Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
KIA
