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50N06 - N-CHANNEL POWER MOSFET

General Description

The UTC 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed.

Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt.

Key Features

  • S.
  • RDS(ON) ≤ 23mΩ @ VGS=10V, ID=25A.
  • Fast switching capability.
  • 100% avalanche energy specified.
  • Improved dv/dt capability.
  • SYMBOL 2.Drain 1 1 1 TO-220 TO-220F 1 TO-220F1 TO-220F3 1 TO-263 1.Gate 3.Source.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD 50N06 Power MOSFET 50A, 60V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt. It is mainly suitable electronic ballast, and low power switching mode power appliances.  FEATURES * RDS(ON) ≤ 23mΩ @ VGS=10V, ID=25A * Fast switching capability * 100% avalanche energy specified * Improved dv/dt capability  SYMBOL 2.Drain 1 1 1 TO-220 TO-220F 1 TO-220F1 TO-220F3 1 TO-263 1.Gate 3.