SJMN190R65B Overview
SJMN190R65B Super Junction MOSFET N-Channel Super Junction MOSFET.
SJMN190R65B Key Features
- Drain-Source voltage: VDS=700V (@TJ=150C)
- Low drain-source On resistance: RDS(on)=0.19Ω (Max.)
- Ultra low gate charge: Qg=20nC(Typ.)
- RoHS pliant device
- 100% avalanche tested