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SJMN190R65B - N-Channel Super Junction MOSFET

Features

  • Drain-Source voltage: VDS=700V (@TJ=150C).
  • Low drain-source On resistance: RDS(on)=0.19Ω (Max. ).
  • Ultra low gate charge: Qg=20nC(Typ. ).
  • RoHS compliant device.
  • 100% avalanche tested Ordering Information Part Number Marking Package SJMN190R65B N190R65 TO-263 D GS TO-263 (D2-PAK) Marking Information SJMN 190R65 YWWZ Column 1: Manufacturer Column 2: Production Information e. g. ) YWWN -. YWW: Data Code (year, week) -. Z: Management Code Absolute maximum ratings (T.

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Datasheet Details

Part number SJMN190R65B
Manufacturer KODENSHI KOREA
File Size 579.30 KB
Description N-Channel Super Junction MOSFET
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SJMN190R65B Super Junction MOSFET N-Channel Super Junction MOSFET Features  Drain-Source voltage: VDS=700V (@TJ=150C)  Low drain-source On resistance: RDS(on)=0.19Ω (Max.)  Ultra low gate charge: Qg=20nC(Typ.)  RoHS compliant device  100% avalanche tested Ordering Information Part Number Marking Package SJMN190R65B N190R65 TO-263 D GS TO-263 (D2-PAK) Marking Information SJMN 190R65 YWWZ Column 1: Manufacturer Column 2: Production Information e.g.) YWWN -. YWW: Data Code (year, week) -.
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