SJMN190R65F
Key Features
- Drain-Source voltage: VDS=700V (@TJ=150°C)
- Low drain-source On resistance: RDS(on)=0.19Ω (Max.)
- Ultra low gate charge: Qg=20nC(Typ.)
- RoHS pliant device
- 100% avalanche tested
- Part: SJMN190R65F
- Description: N-Channel Super Junction MOSFET
- Category: MOSFET
- Manufacturer: Kodenshi AUK Group
- Size: 1.15 MB