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SJMN190R65F - N-Channel Super Junction MOSFET

Features

  • Drain-Source voltage: VDS=700V (@TJ=150°C).
  • Low drain-source On resistance: RDS(on)=0.19Ω (Max. ).
  • Ultra low gate charge: Qg=20nC(Typ. ).
  • RoHS compliant device.
  • 100% avalanche tested Ordering Information Part Number Marking Package SJMN190R65F N190R65 TO-220F-3L GDS TO-220F-3L Marking Information AAUUKK ◎△Δ.

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Datasheet Details

Part number SJMN190R65F
Manufacturer KODENSHI KOREA
File Size 1.15 MB
Description N-Channel Super Junction MOSFET
Datasheet download datasheet SJMN190R65F Datasheet
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SJMN190R65F Super Junction MOSFET N-Channel Super Junction MOSFET Features • Drain-Source voltage: VDS=700V (@TJ=150°C) • Low drain-source On resistance: RDS(on)=0.19Ω (Max.) • Ultra low gate charge: Qg=20nC(Typ.) • RoHS compliant device • 100% avalanche tested Ordering Information Part Number Marking Package SJMN190R65F N190R65 TO-220F-3L GDS TO-220F-3L Marking Information AAUUKK ◎△ΔYYMMDDDD N190R65 SDB20D45 Column 1: Manufacturer Column 2: Production Information e.g.) ◎△YMDD -. ◎△: Factory Management Code -.
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