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SJMN6 0 0 R6 5 D
Super Junction MOSFET
N-Channel Super Junction MOSFET
Fe at ur e s
• Drain-Source volt age: VDS=700V (@TJ=150°C) • Low drain-source On resist ance: RDS(on)=0. 6Ω (Max. ) • Ult ra low gat e charge: Qg=13. 5nC(Typ. )
• RoHS compl iant device • 100%avalanche t est ed
Ordering Information
Part Number
Marking
Package
SJMN6 0 0 R6 5 D
SJMN6 0 0 R6 5
TO- 2 5 2
D
G S
TO-252
Marking Information
SJMN 6 0 0 R6 5
YWWN
Column 1, 2: Device Code Column 3: Production Information
e. g. ) YWWN -. YWW: Date Code (year, week) -.
SJMN600R65D Datasheet
