SJMN600R65F Key Features
- Drain-Source voltage: VDS=700V (@TJ=150C)
- Low drain-source On resistance: RDS(on)=0.6Ω (Max.)
- Ultra low gate charge: Qg=13.5nC(Typ.)
- RoHS pliant device
- 100% avalanche tested
- Part: SJMN600R65F
- Manufacturer: Kodenshi AUK Group
- Size: 567.77 KB
Related Kodenshi AUK Group Datasheets
| Part Number | Description |
|---|---|
| SJMN600R65D | N-Channel Super Junction MOSFET |
| SJMN600R70D | N-Channel Super Junction MOSFET |
| SJMN600R70F | N-Channel Super Junction MOSFET |
| SJMN60R15FM | N-Channel Super Junction MOSFET |
| SJMN60R38D | N-Channel Super Junction MOSFET |
SJMN600R65F Description
SJMN600R65F Super Junction MOSFET N-Channel Super Junction MOSFET.