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SJMN600R65F - N-Channel Super Junction MOSFET

Features

  • Drain-Source voltage: VDS=700V (@TJ=150C).
  • Low drain-source On resistance: RDS(on)=0.6Ω (Max. ).
  • Ultra low gate charge: Qg=13.5nC(Typ. ).
  • RoHS compliant device.
  • 100% avalanche tested Ordering Information Part Number Marking Package SJMN600R65F N600R65 TO-220F-3L GDS TO-220F-3L Marking Information AAUUK K ◎△Δ.

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Datasheet Details

Part number SJMN600R65F
Manufacturer KODENSHI KOREA
File Size 567.77 KB
Description N-Channel Super Junction MOSFET
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SJMN600R65F Super Junction MOSFET N-Channel Super Junction MOSFET Features  Drain-Source voltage: VDS=700V (@TJ=150C)  Low drain-source On resistance: RDS(on)=0.6Ω (Max.)  Ultra low gate charge: Qg=13.5nC(Typ.)  RoHS compliant device  100% avalanche tested Ordering Information Part Number Marking Package SJMN600R65F N600R65 TO-220F-3L GDS TO-220F-3L Marking Information AAUUK K ◎△ΔYYMMDDDD N600R65 SDB20D45 Column 1: Manufacturer Column 2: Production Information e.g.) ◎△YMDD -. ◎△: Factory Management Code -.
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