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SJMN6 5 R3 8 D
Super Junction MOSFET
N-Channel Super Junction MOSFET
Fe at ur e s
• Drain-Source volt age: VDS=700V (@TJ=150°C) • Low drain-source On resist ance: RDS(on)=0. 34Ω (Typ. ) • Ult ra low gat e charge: Qg=28nC(Typ. ) • RoHS compl iant device
• 100%avalanche t est ed
Ordering Information
Part Number
Marking
Package
SJMN6 5 R3 8 D
SJMN6 5 R3 8
TO- 2 2 0 F- 3 L
D
G S
TO-252
Marking Information
SJMN 6 5 R3 8 YWWN
Column 1, 2: Device Code Column 3: Production Information
e. g. ) YWWN -. YWW: Date Code (year, week) -.
SJMN65R38D Datasheet
