Download SJMN65R38F Datasheet PDF
SJMN65R38F page 2
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SJMN65R38F Key Features

  • Drain-Source voltage: VDS=700V (@TJ=150C)
  • Low drain-source On resistance: RDS(on)=0.34Ω (Typ.)
  • Ultra low gate charge: Qg=20nC(Typ.)
  • RoHS pliant device
  • 100% avalanche tested

SJMN65R38F Description

SJMN65R38F Super Junction MOSFET N-Channel Super Junction MOSFET.