SMN18T50FD - Advanced N-Ch Power MOSFET

KODENSHI (Kodenshi AUK Group)

Key Features

Drain-Source breakdown voltage: BVDSS = 500V.
Low gate charge: Qg=65nC (Typ. ).
Low drain-source On resistance: RDS(on)=0.21Ω (Typ. ).
100% avalanche tested.
RoHS compliant device Ordering Information Part Number Marking Package SMN18T50FD SMN18T50 TO-220F-3L GDS TO-220F-3L Marking Information AUAKUK SMNF1ΔY8YMTMD5DD0 D SDB20D45 Column 1: Manufacturer Column 2: Production Information e. g. ) FYMDD -. F: Factory Management Code -. YMDD: Date Code (Year, Month, Dat.

SMN18T50FD advanced n-ch power mosfet by KODENSHI (Kodenshi AUK Group) - Datasheet Preview

Datasheet Details

Part number	SMN18T50FD
Manufacturer	KODENSHI (Kodenshi AUK Group)
File Size	344.19 KB
Description	Advanced N-Ch Power MOSFET
Datasheet	SMN18T50FD Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SMN18T50FD Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features  Drain-Source breakdown voltage: BVDSS = 500V  Low gate charge: Qg=65nC (Typ.)  Low drain-source On resistance: RDS(on)=0.21Ω (Typ.)  100% avalanche tested  RoHS compliant device Ordering Information Part Number Marking Package SMN18T50FD SMN18T50 TO-220F-3L GDS TO-220F-3L Marking Information AUAKUK SMNF1ΔY8YMTMD5DD0 D SDB20D45 Column 1: Manufacturer Column 2: Production Information e.g.) FYMDD -. F: Factory Management Code -.