SMN18T50FD Overview
SMN18T50FD Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION.
SMN18T50FD Key Features
- Drain-Source breakdown voltage: BVDSS = 500V
- Low gate charge: Qg=65nC (Typ.)
- Low drain-source On resistance: RDS(on)=0.21Ω (Typ.)
- 100% avalanche tested
- RoHS pliant device
- F: Factory Management Code -. YMDD: Date Code (Year, Month, Date) Column 3: Device Code