SNN0310Q Overview
Key Features
- Max. RDS(ON) = 150m at VGS = 10V, ID = 2A
- Low gate charge: Qg=18nC (Typ.)
- High performance trench technology for extremely low RDS(on)
- 100% avalanche tested
- Halogen free and RoHS compliant device
| Part | SNN0310Q |
|---|---|
| Description | Advanced N-Ch Trench MOSFET |
| Category | MOSFET |
| Manufacturer | Kodenshi AUK Group |
| Size | 362.85 KB |
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