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SNN0310Q - Advanced N-Ch Trench MOSFET

Features

  • Max. RDS(ON) = 150m at VGS = 10V, ID = 2A.
  • Low gate charge: Qg=18nC (Typ. ).
  • High performance trench technology for extremely low RDS(on).
  • 100% avalanche tested.
  • Halogen free and RoHS compliant device Ordering Information Part Number Marking Package G D S SNN0310Q SNN0310Q SOT-223 D SOT-223 Marking Information SNN0310Q YWW Column 1: Device Code Column 2: Production Information e. g. ) YWW -. Y: Year Code -. WW: Week Code Absolute maximum ratings (TC=25C unle.

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Datasheet Details

Part number SNN0310Q
Manufacturer KODENSHI KOREA
File Size 362.85 KB
Description Advanced N-Ch Trench MOSFET
Datasheet download datasheet SNN0310Q Datasheet

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Full PDF Text Transcription

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SNN0310Q Advanced N-Ch Trench MOSFET 100V, 3A N-Channel Power Trench MOSFET Features  Max. RDS(ON) = 150m at VGS = 10V, ID = 2A  Low gate charge: Qg=18nC (Typ.)  High performance trench technology for extremely low RDS(on)  100% avalanche tested  Halogen free and RoHS compliant device Ordering Information Part Number Marking Package G D S SNN0310Q SNN0310Q SOT-223 D SOT-223 Marking Information SNN0310Q YWW Column 1: Device Code Column 2: Production Information e.g.) YWW -. Y: Year Code -.
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