SNN0310Q Description
SNN0310Q Advanced N-Ch Trench MOSFET 100V, 3A N-Channel Power Trench MOSFET.
SNN0310Q Key Features
- Max. RDS(ON) = 150m at VGS = 10V, ID = 2A
- Low gate charge: Qg=18nC (Typ.)
- High performance trench technology for extremely low RDS(on)
- 100% avalanche tested
- Halogen free and RoHS pliant device
- Y: Year Code
- WW: Week Code