SNN0630Q Overview
Key Features
- Low On-state resistance: 28m at VGS = 10V, ID = 2.9A
- Low gate charge: Qg= 4.5nC (Typ.)
- High performance trench technology for extremely low RDS(on)
- 100% avalanche tested
- Halogen free and RoHS compliant device
| Part | SNN0630Q |
|---|---|
| Description | Advanced N-Ch Trench MOSFET |
| Category | MOSFET |
| Manufacturer | Kodenshi AUK Group |
| Size | 384.30 KB |
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