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SNN0630Q - Advanced N-Ch Trench MOSFET

Features

  • Low On-state resistance: 28m at VGS = 10V, ID = 2.9A.
  • Low gate charge: Qg= 4.5nC (Typ. ).
  • High performance trench technology for extremely low RDS(on).
  • 100% avalanche tested.
  • Halogen free and RoHS compliant device Ordering Information Part Number Marking Package G D S SNN0630Q SNN0630 SOT-223 D SOT-223 Marking Information SNN0630 YWW Column 1: Device Code Column 2: Production Information e. g. ) YWW -. Y: Year Code -. WW: Week Code Absolute maximum ratings (T.

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Datasheet Details

Part number SNN0630Q
Manufacturer KODENSHI KOREA
File Size 384.30 KB
Description Advanced N-Ch Trench MOSFET
Datasheet download datasheet SNN0630Q Datasheet

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Full PDF Text Transcription

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SNN0630Q Advanced N-Ch Trench MOSFET Portable Equipment Application Features  Low On-state resistance: 28m at VGS = 10V, ID = 2.9A  Low gate charge: Qg= 4.5nC (Typ.)  High performance trench technology for extremely low RDS(on)  100% avalanche tested  Halogen free and RoHS compliant device Ordering Information Part Number Marking Package G D S SNN0630Q SNN0630 SOT-223 D SOT-223 Marking Information SNN0630 YWW Column 1: Device Code Column 2: Production Information e.g.) YWW -. Y: Year Code -.
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