SNN0630Q Description
SNN0630Q Advanced N-Ch Trench MOSFET Portable Equipment Application.
SNN0630Q Key Features
- Low On-state resistance: 28m at VGS = 10V, ID = 2.9A
- Low gate charge: Qg= 4.5nC (Typ.)
- High performance trench technology for extremely low RDS(on)
- 100% avalanche tested
- Halogen free and RoHS pliant device
- Y: Year Code
- WW: Week Code