SNN4010D Description
SNN4010D N-Ch Trench MOSFET Power Switching Application.
SNN4010D Key Features
- Drain-source breakdown voltage: BVDSS=100V
- Low gate charge device
- Low drain-source On resistance: RDS(on)=25mΩ (Typ.)
- Advanced trench process technology
- High avalanche energy, 100% test
- YWW: Date Code (year, week)