SNN4010D - N-Ch Trench MOSFET

Product Overview

KODENSHI KOREA

Part number	SNN4010D
Manufacturer	KODENSHI KOREA
File Size	308.62 KB
Description	N-Ch Trench MOSFET
Datasheet	SNN4010D Datasheet
Additional preview pages of the SNN4010D datasheet.

Drain-source breakdown voltage: BVDSS=100V.
Low gate charge device.
Low drain-source On resistance: RDS(on)=25mΩ (Typ. ).
Advanced trench process technology.
High avalanche energy, 100% test Ordering Information Part Number Marking Package SNN4010D SNN4010 TO-252 D G S TO-252 Marking Information SNN 4010 YWW Column 1, 2: Device Code Column 3: Production Information e. g. ) YWW -. YWW: Date Code (year, week) Absolute maximum ratings (TC=25C unless otherwise n.

📁 Similar Datasheet

Other Datasheets by KODENSHI KOREA

Published: Jan 24, 2017 |