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SNN4010D - N-Ch Trench MOSFET

Features

  • Drain-source breakdown voltage: BVDSS=100V.
  • Low gate charge device.
  • Low drain-source On resistance: RDS(on)=25mΩ (Typ. ).
  • Advanced trench process technology.
  • High avalanche energy, 100% test Ordering Information Part Number Marking Package SNN4010D SNN4010 TO-252 D G S TO-252 Marking Information SNN 4010 YWW Column 1, 2: Device Code Column 3: Production Information e. g. ) YWW -. YWW: Date Code (year, week) Absolute maximum ratings (TC=25C unless otherwise n.

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Datasheet Details

Part number SNN4010D
Manufacturer KODENSHI KOREA
File Size 308.62 KB
Description N-Ch Trench MOSFET
Datasheet download datasheet SNN4010D Datasheet

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Full PDF Text Transcription

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SNN4010D N-Ch Trench MOSFET Power Switching Application Features  Drain-source breakdown voltage: BVDSS=100V  Low gate charge device  Low drain-source On resistance: RDS(on)=25mΩ (Typ.)  Advanced trench process technology  High avalanche energy, 100% test Ordering Information Part Number Marking Package SNN4010D SNN4010 TO-252 D G S TO-252 Marking Information SNN 4010 YWW Column 1, 2: Device Code Column 3: Production Information e.g.) YWW -.
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