SNN4010D Overview
Key Features
- Drain-source breakdown voltage: BVDSS=100V
- Low gate charge device
- Low drain-source On resistance: RDS(on)=25mΩ (Typ.)
- Advanced trench process technology
- High avalanche energy, 100% test
| Part | SNN4010D |
|---|---|
| Description | N-Ch Trench MOSFET |
| Category | MOSFET |
| Manufacturer | Kodenshi AUK Group |
| Size | 308.62 KB |
Pricing from 0.2611 USD, available from UnikeyIC and Unikeyic (ICkey).Powered by Octopart
Price & Availability
| Seller | Inventory | Price Breaks | Buy |
|---|---|---|---|
| UnikeyIC | 400000 | 50+ : 0.2611 USD 100+ : 0.2568 USD 150+ : 0.2503 USD |
View Offer |
| Unikeyic (ICkey) | 400000 | 50+ : 0.2611 USD 100+ : 0.2568 USD 150+ : 0.2503 USD |
View Offer |
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