Kodenshi AUK Group SMK0460I
Advanced N-Ch Power MOSFET
APPLICATIONS
FEATURES
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● High Voltage: BVDSS=600V(Min.) Low Crss : Crss=9.8pF(Typ.) Low gate charge : Qg=12nC(Typ.) Low RDS(on) :RDS(on)=2.5Ω(Max.) Type No. SMK0460I Marking SMK0460 Package Code I-PAK GD S S I-PAK PIN Connection D G Ordering Information Marking Diagram SMK0460 YWW Column 1 2 : Device Code Column 3: Production Information e.g.) YWW -. Y: Year Code -. WW: Week Code Absolute maximum ratings (TC=25C unless otherwise noted) Characteristic Drain-source voltage Gate-source voltage Drain current (DC) Drain current (Pulsed) * Symbol VDSS VGSS ID (Tc=25℃) (Tc=100℃) IDM PD ② ② ① ① IAS EAS IAR EAR TJ Tstg Rating 600 30 4 2.53 16 48 4 225 4 10 150 -55~150 Unit V V A A A W A mJ A mJ C Drain Power dissipation Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy Junction temperature Storage temperature range * Limited by maximum junction temperature Characteristic Thermal resistance Junction-case Junction-ambient...