Datasheet4U Logo Datasheet4U.com

STB205L - PNP Silicon Transistor

General Description

Suitable for low voltage large current drivers

Excellent hFE Linearity.

Switching Application PIN Connection

Key Features

  • High hFE : hFE=200~400.
  • Low collector saturation voltage. : VCE(sat)=-0.5V(MAX. ) TO -92L 1: Emitter 2 :Collector 3: Base Ordering Information Type NO. Marking Package Code STB205L STB 205 YWW TO-92L STB205: DEVICE CODE, YWW(Y : Year code, WW : Weekly code) Absolute Maximum Ratings (Ta=25°C) Characteristic Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature S.

📥 Download Datasheet

Datasheet Details

Part number STB205L
Manufacturer KODENSHI
File Size 261.87 KB
Description PNP Silicon Transistor
Datasheet download datasheet STB205L Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
STB200N04 Power MOSFET STMicroelectronics
STB200N4F3 N-channel Power MOSFET STMicroelectronics
STB200N6F3 60V N-Channel Power MOSFET ST Microelectronics
STB200NF03 N-CHANNEL POWER MOSFET ST Microelectronics
STB200NF03-1 N-CHANNEL POWER MOSFET ST Microelectronics

Other Datasheets by KODENSHI

Part Number Description
STB1017PI PNP Silicon Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STB205L PNP Silicon Transistor Descriptions • Suitable for low voltage large current drivers • Excellent hFE Linearity. • Switching Application PIN Connection Features • High hFE : hFE=200~400 • Low collector saturation voltage. : VCE(sat)=-0.5V(MAX.) TO -92L 1: Emitter 2 :Collector 3: Base Ordering Information Type NO.