STB20NK50Z-S Datasheet | STMicroelectronics

DESCRIPTION The Super MESH™ series is obtained through an extreme optimization of ST’s well established strip INTERNAL SCHEMATIC DIAGRAM based Power MESH™ layout. In addition to pushing .. on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series plements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC ORDERING INFORMATION SALES TYPE STB20NK50ZT4 STB20NK50Z-S STP20NK50Z STW20NK50Z May 2004 MARKING B20NK50Z B20NK50Z P20NK50Z W20NK50Z PACKAGE D2PAK I2SPAK TO-220 TO-247 PACKAGING TAPE & REEL TUBE TUBE TUBE 1/13 .. .. .. STP20NK50Z - STB20NK50Z - STW20NK50Z - STB20NK50Z-S ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM ( ) PTOT VESD(G-S) dv/dt (1) Tj Tstg Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate source ESD(HBM-C=100 p F, R=1.5 KΩ) Peak Diode Recovery voltage slope Operating Junction Temperature Storage Temperature Value 500 500 ± 30 17 10.71 68 190 1.51 6000 4.5 -55 to 150 Unit V V V A A A W W/°C V V/ns °C ( ) Pulse width limited by safe operating area (1) ISD ≤17A, di/dt ≤ 200A/µs, VDD ≤ V(BR)DSS, Tj ≤ T JMAX. (- ) Limited only by maximum temperature allowed THERMAL DATA TO-220/D2PAK Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 62.5 300 0.66 50 TO-247 °C/W °C AVALANCHE CHARACTERISTICS Symbol IAR EAS .. Parameter Max Value 17 850 Unit A m J Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) GATE-SOURCE ZENER DIODE Symbol BVGSO...