STB20NK50Z Datasheet | STMicroelectronics

Features Type VDSS RDS(on) max STB20NK50Z 500 V < 0.27 Ω 17 A 190 W ct(s) - Extremely high dv/dt capability du - 100% avalanche tested ro - Gate charge minimized P - Very low intrinsic capacitances te - Very good manufacturing repeatability sole Application Ob - Switching applications t(s) - Description c This device is an N-channel Zener-protected u Power MOSFET developed using d STMicroelectronics’ Super MESH™ technology, ro achieved through optimization of ST’s well P established strip-based Power MESH™ layout. In te addition to a significant reduction in on- resistance, this device is designed to ensure a le high level of dv/dt capability for the most Obso demanding applications. 3 1 D²PAK Figure 1. Internal schematic diagram D(2) G(1) S(3) AM01476v1 Table 1. Device summary Order code STB20NK50Z Marking B20NK50Z Package D²PAK Packaging Tape and reel March 2012 This is information on a discontinued product. Doc ID 9118 Rev 10 1/15 .st. Contents Contents Electrical ratings - - - - - - - - . . . . 3 Electrical characteristics...