SMK0460F
SMK0460F is Advanced N-Channel Power MOSFET manufactured by Kodenshi AUK Group.
Features
- -
- - High Voltage : BVDSS=600V(Min.) Low Crss : Crss=9.8p F(Typ.) Low gate charge : Qg=12n C(Typ.) Low RDS(on) : RDS(on)=2.5Ω(Max.)
G Package Code TO-220F-3L GD S TO-220F-3L
PIN Connection
Ordering Information
Type No. SMK0460F Marking SMK0460
Marking Diagram
Column 1 : Manufacturer
AUK AUK GYMDD ΔYMDD SMK0460 SDB20D45
Column 2 : Production Information e.g.) GYMDD -. G : Factory management code -. YMDD : Date Code (year, month, date) Column 3 : Device Code
Absolute maximum ratings (TC=25°C unless otherwise noted)
Characteristic
Drain-source voltage Gate-source voltage Drain current (DC)
- Drain current (Pulsed) Power dissipation Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy Junction temperature Storage temperature range
- Limited by maximum junction temperature ② ② ① ①
- Symbol
VDSS VGSS ID (Tc=25℃) (Tc=100℃) IDM PD IAS EAS IAR EAR TJ Tstg
Rating
600 ±30 4 2.53 16 30 4 225 4 10 150 -55~150
Unit
V V A A A W A m J A m J °C
Characteristic
Thermal resistance Junction-case Junction-ambient
Symbol
Rth(J-C) Rth(J-A)
Typ.
- Max.
4.16 62.5
Unit
°C/W
KSD-T0O031-003
Free
Datasheet http://.0PDF.
Electrical Characteristics (TC=25°C unless otherwise noted)
Characteristic
Drain-source breakdown voltage Gate threshold voltage Drain-source cut-off current Gate leakage current Drain-source on-resistance Forward transfer conductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge ④...